Home        Professor        Members       Research        Publications        Photos        Recruit


2014 MS635: ݵü

        2016 : ݵü (MS415)                    2014 : ݵü (MS635) 

񱸺

(MS635, ݵü )

ȣ

MS635,  Tu-Th  1:00-2:15, #1318

;;

3-0-3

Text

 Mainly Handouts

 

 Other references

 

1. Introduction to Microelectronic Fabrication by Richard Jaeger

   Volume 5 of Modular Series on Solid State Devices (2nd Edition)

2. Physics of Semiconductor Devices, 3rd Edition, Simon M. Sze, Kwok K. Ng

2. Silicon VLSI Technology: Fundamentals,Practice, and Modeling, (2nd Edition) James D. Plummer

Objective

To present the theoretical and practical background of modern semiconductor
process and device design. The students understand the basic theory, terminology and TCAD simulation of advanced electronic devices and process.

Grading Policy

 

    Quiz   

20%

Final

40%

HW

15%

Project

15%

Class conduct

10%

 

Course schedule

 

Week
Topic

1

Overview of MOSFET theory

2

Device Physics for the Submicron MOSFET:

Scaling theory & Short channel effect

3

Emerging Devices: SOI, FINFET, Trigate, Gate-all-around(GAA),  Vertical Surrounding Gate Transistor(SGT)

4

Introduction to TCAD Device Physics

5

Semiconductor Device Design using

TCAD Simulation

6

CMOS Process Integration, Strain Engineering

7

Unit Process: Diffusion & Oxidation

8

Quiz

9

Unit Process: Ion Implantation

10

Semiconductor Process Design using

TCAD  Simulation

11

Unit Process: Lithography

12

Unit Process: Wet & Dry Etch

13

Unit Process: Thin Film Technology

14

Unit Process: Contact & Metallization & S/D Engineering

15

Unit Process: Electronic Packaging & Assembly

16

Final exam

Recent Student's Class Evaluation

MS 481 ݵü (2015 )

MS 415 ݵü (2015 )

  HW & Notes

 Members only